Toshiba has introduced two new N-channel power MOSFETs—TPM1R908QM (80V) and TPM7R10CQ5 (150V)—that leverage its new SOP Advance(E) packaging. This advanced package significantly improves efficiency, thermal performance, and reliability in power electronics applications, making these MOSFETs ideal for high-performance power supplies and industrial systems.
What’s New?
The standout feature in Toshiba’s latest MOSFETs is not just the silicon design but the use of SOP Advance(E) packaging. This packaging improves internal structure to lower electrical and thermal resistance compared to earlier SOP packages. It reduces package resistance by about 65% and thermal resistance by around 15%, enabling better heat dissipation and lower conduction losses.
Key Specifications
- TPM1R908QM (80V):
- R<sub>DS(on)</sub>: 1.5 mΩ typical
- Drain current: Up to 238 A
- Gate charge: 108 nC
- Thermal resistance (junction-to-case): 0.6 °C/W
- TPM7R10CQ5 (150V):
- R<sub>DS(on)</sub>: 5.7 mΩ typical
- Drain current: Up to 120 A
- Gate charge: 18 nC
- Fast reverse recovery time for efficient rectification
These specs reflect improved switching speed, lower heat generation, and support for high current levels in compact spaces.
Benefits of SOP Advance(E) Packaging
The new packaging improves:
- Thermal Performance: Lower thermal resistance enhances cooling and reduces need for large heatsinks.
- Electrical Efficiency: Reduced package resistance leads to lower power loss.
- Size Optimization: Compact design allows tighter PCB layouts.
This makes the devices well-suited for server power supplies, telecom systems, industrial drives, and DC-DC converters.
Applications
These MOSFETs are ideal for:
- High-efficiency power supplies
- Synchronous rectification
- Power conversion in telecom and industrial sectors
- Systems requiring compact and thermally robust MOSFETs
Their efficiency and heat-handling characteristics help reduce system size and cooling requirements.
Design Support
Toshiba supports these devices with:
- SPICE models for simulation
- Thermal and electrical characterization data
- Tools for evaluating efficiency and switching behavior in real-world conditions
Frequently Asked Question
What is SOP Advance(E)?
It’s Toshiba’s new MOSFET packaging that lowers electrical and thermal resistance, improving efficiency and heat dissipation.
How is TPM1R908QM different from earlier models?
It offers ~21% lower on-resistance and ~15% better thermal performance than previous versions, with faster switching and higher current capacity.
What voltage classes are supported?
TPM1R908QM supports 80V applications, while TPM7R10CQ5 is rated for 150V.
What makes these MOSFETs efficient?
Lower R<sub>DS(on)</sub>, improved switching behavior, and better heat transfer all contribute to higher system efficiency.
Where can these MOSFETs be used?
In power supplies, telecom equipment, industrial systems, and compact converters.
Are simulation tools available?
Yes, Toshiba provides SPICE models and datasheets for simulation and circuit integration.
Why is packaging important in MOSFETs?
Packaging affects electrical losses and thermal resistance, directly impacting performance, efficiency, and reliability.
Conclusion
Toshiba’s TPM1R908QM and TPM7R10CQ5 MOSFETs represent a strong leap forward in efficiency and performance, driven by the innovative SOP Advance(E) packaging. With better thermal management, lower on-resistance, and improved current handling, they offer practical benefits for engineers designing compact and efficient power systems.